50x 1T403B High hFE Germanium Transistors NOS NIB ussr

1t403B  transistors

High hFE 50-150

New old stock  in original paper box

Made in ussr in 1989

Lot of 50 pcs

They are intended for use in switching devices, output stages of low-frequency amplifiers, converters and DC stabilizers.

They are used for work in special-purpose electronic equipment.

They are produced in a metal-glass case with flexible leads.

The transistor weighs no more than 4.0 g.

Рк t max — Continuous dissipated power of the collector with a heat sink: 4 W;

• fmax — Maximum generation frequency: 0.008 MHz;

• Uкбо проб — Collector-base breakdown voltage at a given reverse collector current and open emitter circuit: 45 V;

• Uэбо проб — Emitter-base breakdown voltage at a given reverse emitter current and open collector circuit: 20 V;

• Iк max — Maximum permissible direct collector current: 1250 mA;

• Iкбо — Reverse collector current — current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 50 μA at 45 V;

• h21э — Transistor voltage feedback coefficient in small signal mode for circuits with common emitter and common base, respectively: 50…150 at 5V, 0.1 A;

• Rкэ сас — Saturation resistance between collector and emitter: no more than 1 Ohm;